Displacement Response Sensor By Pushing Contact

ABSTRACT

The invention is about the displacement response sensor by push down contact, because the contact department ( 11 ) is consist of the materials that contains electric conduction and the plastics that the elasticity is good or the rubber of softness such as gum or silicon, when push down contact is made to the contact department, the Semi Conductive Metrix ( 14 ) is reduced, and the density of the electric conduction ( 15 ) of the Semi Conductive Metrix ( 14 ) becomes large to sense the push down contact, and because it is made of the soft materials, it can be made and installed as various forms. It is easy to make and install, so it can be installed to the automatic revolving door (D), automatic sliding door (D), the bumper of vehicle, on the front and back of the streetcar, measuring machine of pressure or weight, and on the system or pipe that use gas, it can be used to measure the pressure of air or liquid and so on.

TECHNICAL FIELD

This invention is about sensor, especially about the displacement response sensor by that push down contact that is easy to make and set up.

BACKGROUND ART

This invention is about sensor, especially about the displacement response sensor by that push down contact that is easy to make and set up.

The large meaning of sensor is devices that change from a physical quantity to another physical quantity.

In other words, because it means a device that makes a response to stimulation when there is a physical stimulation, there are many kinds of sensors and new sensors are continuously created.

There are two kinds of sensors;

Contacting sensor that perceives the existence of an object by contacting the object;

and Non-contacting sensor that perceives the existence of an object without contacting the object.

The contacting sensor is used wider than the non-contacting sensor, for it uses limit switch limit switch, it is truthful even in unclear air, it is appropriate for the place where needs safeness from explosion, and it is not sensitive to an effect of magnetic field.

However, it was difficult to put a previous contacting sensor to some part of the limited device that is narrower than the limit switch space because it uses the limit switch.

Therefore, the previous contacting sensors had limitations to be put to the various featured devices.

DISCLOSURE OF INVENTION Technical Problem

The purpose of this invention to solve the problem mentioned above, is to provide the displacement response sensor by push down contact that can be made as various features and set up in the various devices.

Technical Solution

In order to accomplish the purposes, this invention, displacement response sensor by push down contact has special characteristics and consist of the followings;

The displacement response sensor includes electronic conduction materials, and the Semi Conductive Metrix that has elasticity of resistance Rx;

The 1^(st) conductor including the electronic conduction is established on the above of Semi Conductive Metrix;

The 2^(nd) conductor including the electronic conduction is established on the bottom part of Semi Conductive Metrix;

the resistance 1 that is connected to the above 1^(st) conductor and the electronic part;

and the resistance 2 that is connected to the 2^(nd) conductor and touched to the part of resistance 2;

the 1^(st) comparison machine of voltage that the low part terminal (−) is connected to the 1^(st) conductor;

the 2^(nd) comparison machine of voltage that the high part terminal (+) is connected to the above 2^(nd) conductor;

the resistance 3 that a part is connected to the electronic power, and the other part is connected to the high part terminal (+) of the above 1^(st) comparison machine of voltage;

the resistance 4 that a part is connected to the above the terminal (+) of the 1^(st) comparison machine of voltage, and the other part is connected to the terminal (−) of the 2^(nd) comparison machine of voltage;

the resistance 5 that a part is connected, and the other part is connected to the terminal (−) of the above the 2^(nd) comparison machine of the voltage;

and the OR gate that is connected to the above 1^(st) comparison machine of voltage and the 2^(nd) comparison machine of voltage, and that make a signal according to the output.

Therefore, because the synthetic resins that the touched part includes the electronic conduction, and that is consist of gum or silicon materials that has elasticity such as synthetic resins or softness, when the push down contact is made on the touched part from the outside, the Semi Conductive Metrix would be reduced and the density of the electronic conduction becomes large and it is possible to sense the push down, and it is made of the soft materials,

it is easy to be made and established as various shapes and can be installed to an automatic revolving door, an automatic sliding door, a bumper of cars, the front, side and the back of a streetcar, a pressure gauge, a weight gauge and any device or pipe that use air, so it would be effective for the various fields such as measurement of air pressure or liquid pressure.

Advantageous Effects

As you can see above, in this invention, displacement response sensor by push down contact, because the contact part (11) where has electric conduction, and the elasticity is good such as plastics or the rubber of softness such as gum or silicon, the push down contact is made from outside to the contact part (11), the Semi Conductive Metrix (14) is reduced, the density of the electric conduction (15) of the Semi Conductive Metrix (14) becomes larger to sense the pressure, and it is consist of the softness materials, it can be made and installed as various shapes to automatic revolving door (D), automatic sliding door (D), bumper of vehicles, front, back and side of streetcars, and it also can be installed to the pressure gauge or weight gauge, and also to the machine that use gas or pipe to measure air pressure or liquid pressure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a brief electronic circuit that shows the displacement response sensor by that push down contact

FIG. 2˜FIG. 4 are brief cross-sections showing the real examples that the invention, displacement response sensor by that push down contact, is placed.

FIG. 5 is a brief a squint Figure showing the difference features as another example of the invention, displacement response sensor by that push down contact.

FIGS. 6 and 7 are plan Figures that differentiate the set-up situation as an example of the invention, displacement response sensor by that push down contact.

FIGS. 8 and 9 are brief squint Figure that differentiate the Figures as an example of the invention, displacement response sensor by that push down contact.

FIGS. 10 and 11 are the brief electronic circuits constituting to percept a solid wire between the end part of sensor and the comparative electronic circuit part as examples of the invention, displacement response sensor by that push down contact.

FIG. 12 is a brief electronic circuit to get the degree of push down contact as an analogue result number as examples of the invention, displacement response sensor by that push down contact.

FIG. 13 is a brief electronic circuit to get the degree of push down contact as a digital result number as examples of the invention, displacement response sensor by that push down contact.

FIG. 14 is a reduction Figure that shows the result according to the FIG. 13 electronic circuit.

FIG. 15 is a brief electronic circuit that shows the way of distinction of push down contact and distinction of solid wire by the electronic degree that flows on the (Semi Conductive Metrix)(Semi Conductive Metrix, semiconduct layer) as examples of the invention, displacement response sensor by that push down contact.

FIG. 16 is a brief electronic circuit that shows the way of dissolving errors that were created from a noise by removing and the distinction of solid wire as another example of the invention, displacement response sensor by that push down contact.

FIG. 17 is a brief electronic circuit establishing the main circuit and sub-circuit as annex, removing a noise, and applying the special characteristics of hysteresis on the settled push down contact degree as another example of the invention, displacement response sensor by that push down contact.

FIG. 18˜22 are the brief a Figure of looking incline that have different features as another example of the invention, displacement response sensor by that push down contact.

*The Explanation of the Number to the Main Part on the Figure*

10; Contacting part 11; Sensor

12; The 1st conductor

13 ; 2nd conductor

14; Semi Conductive Metrix

15; Electric conduction

16; The 1st comparison machine of voltage

17; 2^(nd) comparison machine of Voltage

18: OR-Gate

19; The 1^(st) resistance

21; 2^(nd) resistance

22; 3rd resistance

23; 4^(th) resistance

24 5^(th) resistance

FIG. 23 is a brief electronic circuit that makes a noise removed by establishing main circuit and sub-circuit as annex and impressing the voltage signal on the sensor contacting part to differential amplifier as another example of the invention, displacement response sensor by that push down contact.

MODE FOR THE INVENTION

The more specific characteristics and good points of this invention will be clear by the explanation with the added Figures below.

FIG. 1 is a brief electronic circuit that shows the displacement response sensor by that push down contact, and the touched part (11) is possessed, and the touched part is consist of Semi Conductive Metrix (14), the 1^(st) conductor (12) and the 2^(nd) conductor (13).

The Semi Conductive Metrix is consist of the soft materials that has electric conduction and elasticity, and it is established between the 1^(st) conductor (12)

the 2^(nd) conductor (13), and it makes resistance Rx.

Here, the Semi Conductive Metrix can be made of not only sponge, but also of the flexible materials such as gum, synthetic resins substance, synthetic rubber, urethane or silicon as foaming or not foaming.

the 1^(st) conductor (12) is consist of gum that has electric conduction (15) and is flexible or synthetic resins substance, synthetic rubber, urethane or silicon, and it is made on the upper part of Semi Conductive Metrix (14)

the 2^(nd) conductor (13) is consist of same materials with the 1^(st) conductor (12), and it is made on the bottom of the Semi Conductive Metrix (14).

And in the 1^(st) conductor (12), there is the resistance 1 (19) that a part is connected to the 1^(st) conductor (12), and the other part is connected to the electronic power.

In the 2^(nd) conductor (13), there is the resistance 2 possessed, that a part is connected to ground, and the other part is connected to the 2nd conductor (13).

In the 1st conductor (12) and the 2^(nd) conductor (13), the 1^(st) comparison machine of voltage (16) and the 2^(nd) comparison machine of voltage (17) are possessed, and in the 1^(st) comparison machine of voltage (16), low part terminal (−) is connected to the 1^(st) conductor (12), and in the 2^(nd) comparison machine of voltage (17), the High part (+) terminal is connected to the 2^(nd) conductor (13).

And in the 1^(st) comparison machine of voltage (16) and the 2^(nd) comparison machine of voltage (17), the resistance 3 (22), the resistance 4 (23) and the resistance 5 (24) are connected.

Here, a part of the resistance 3 (22) is connected to the electric power, and the other part is connect to the high part of the 1^(st) comparison machine of voltage (16), (+) terminal.

In the resistance 4(23), a part is connected to the resistance 3(22) and the terminal (+) of the 1^(st) comparison machine of voltage (16), and the other part is connected to the resistance 5 (24) that will be explained later and the terminal (−), the low part of 2^(nd) comparison machine of voltage (17).

In the resistance 5 (24), a part is connected to the ground, and the other part is connected to the terminal (−) of the 2^(nd) comparison machine of voltage (17).

In the 1^(st) comparison machine of voltage (16) and the 2^(nd) voltage machine (17), there is OR gate that makes signal according to the output of the 1^(st) comparison machine of voltage (16) and the 2^(nd) comparison machine of voltage (17).

This invention Displacement response sensor by that push down contact is consist of the above, and the first sensor (10) keeps the normal condition, and the resistance Rx of the Semi Conductive Metrix (14) is established as two tithes of the resistance 1 (19) R₁ and the resistance 2 (21) R₂.

Thus, because the terminal (−) of the 1^(st) comparison machine of voltage (16) is connected to the 1^(st) conductor that is located on the ¾ of the resistance among R₁, Rx, and R₂, the input of Al of the 1^(st) comparison machine of voltage (16) is ¾ Vcc. (We call terminal (+) of the 1^(st) comparison machine of voltage (16) as Ah, terminal (−) of the 1^(st) comparison machine of voltage (16) as Al, terminal (+) of the 2^(nd) comparison machine of voltage (17) as Bh, and terminal (−) of the 2^(nd) comparison machine of voltage (17) as Bl.)

And because Bh of the 2^(nd) comparison machine of voltage (17) is connected to the 2^(nd) conductor (13) that is located on the ¼ of the resistance among R₁, Rx and R₂, the input of Bh of the 2^(nd) comparison machine of voltage (17) is ¼ Vcc.

And as an example, because it is established as the same output of resistance 3 (22) R₃, resistance 4 (23) R₄, and the resistance 5 (24) R₅, and it is touched to a part of the 1^(st) comparison machine of voltage (16) and the 2^(nd) comparison machine of voltage (17), the input of Ah of the 1^(st) comparison machine of voltage (16) that is connected between the resistance 3 (22) R₃ and the resistance 4 (23) R₄ is ⅔ Vcc. And the input of Bl of the 2^(nd) comparison machine of voltage (17) that is connected to the resistance (24) R₅ is ⅓ Vcc.

Thus, the input of Ah of the 1st comparison machine of voltage (16) is ⅔ Vcc, and the input of Al becomes ¾ Vcc, as a result of that, the input of Al becomes larger than the input of Ah, and finally the output of the 1^(st) comparison machine of voltage (16) becomes low. And the input of Bh of the 2^(nd) comparison machine of voltage (17) is ¼ Vcc, and the input of Bl becomes ⅓ Vcc, as a result of that, the input of Bl becomes larger than the input of Bh, and finally the output of the 2^(nd) comparison machine of voltage (17) becomes low.

Therefore, the outputs of both the 1^(st) comparison machine of voltage (16) and the 2^(nd) comparison machine of voltage (17) becomes low, the output of OR gate (18) whose output is decided according to the outputs of the 1st comparison machine of voltage (16) and the 2^(nd) comparison machine of voltage (17) becomes low in other word “0”, the displacement response sensor by that push down contact keeps normal condition.

As the outside shock is made to the displacement response sensor by that push down contact (10), the Semi Conductive Metrix (14) is pressed by the outside power, and the density of the electric conduction that is included in the Semi Conductive Metrix becomes large, and the electric conduction rate (14) becomes high, and the resistance of Semi Conductive Metrix (14) is close to.

If the resistance of the Semi Conductive Metrix (14) becomes close to Al of the 1^(st) comparison machine of voltage (16) that is connected to the 1^(st) conductor (12) and the input of Bh of the 2^(nd) comparison machine of voltage(17)that is connected to the 2^(nd) conductor (13) are close to ½ Vcc.

Thus, the input of Al, whose first established value was ¾ Vcc becomes less than ⅔ Vcc, which is the fixed value of Ah, and the values of Al and Ah are reversed, and the input of Ah becomes the input of Al, the output of the 1^(st) comparison machine of voltage (16) becomes high.

And the input value of Bh, that the first established value was ¼ Vcc becomes larger than the fixed input of Bl, more than ⅓ Vcc, and the values of Bl and Bh are reversed, and the input of Bh becomes larger than the input of Bl, the output of the 2^(nd) comparison machine of voltage (17) becomes high.

Therefore, the outputs of the 1^(st) comparison machine of voltage (16) and the 2^(nd) comparison machine of voltage (17) becomes high, so the output of OR gate (18) becomes high, and the pressure of sensor (10) is detected.

According to the above explanation, in order to make the sensitivity sensing device in the detection of the displacement of response sensor by push down contact, by controlling the resistance value of the resistance 3 (22) R₃, the resistance 4 (23) R₄, and the resistance 5 (24) R₅, it makes the level difference small between Ah and Al of the 1st comparison machine of voltage (16) or between Bh and Bl of the 2^(nd) comparison machine of voltage (17).

This invention, the displacement response sensor by push down contact adds the electric conduction or anti-semi electric conduction to the materials that has elasticity and with the elasticity it puts the materials that has anti-conductivity between electric conduction and electric conduction, and in confirmation of electrode between electric conduction and electric conduction, even by small outside pressure, the sensor will work.

And thus either one of the 1st comparison machine of voltage (16) part or the 2^(nd) comparison machine of voltage (17) part works, OR gate (18) will work, neither one of the 1st comparison machine of voltage (16) nor the 2^(nd) comparison machine of voltage (17) works, because the OR gate (18) will work, we can trust the sensor (10).

And, the side and around the sharp edges of the flow of the automatic revolving door (D) or automatic sliding door (D), as the various ways of being attached such as the FIG. 2 or FIG. 4. For example, if a hand or foot is between the edge of the automatic revolving door (D) and the wall, or the flow edge and flow of the automatic revolving door (D), the sensor (10) will be pressed, and by the sensor (10), the automatic revolving door will be stopped.

And if a man's hand or foot is put between doors of the automatic sliding door (D), the sensor (10) will be pressed and sensed, the automatic sliding door (D) will be reopen. And, in order to control the driving part of a street car, power connection, it can be installed on the front or back of bumper of toy car or real car, on the front, back or side of a streetcar, so it can be installed between cars, car and obstruction, accidents between car and human, cars, between street cars, street car and obstruction, street car and human in order to making break work to stop the cars or street cars.

Also, because the material of sensor (10) is consist of softness material, sponge, urethane, silicon or gum that has elasticity, so it can be easily made, it can be easily installed, and it makes the outside shock ease.

We cover the insulator on the whole sensor (10) that show the sensor to outside and makes protect screen to protect sensor (10) from dust, humidity, and hit.

And it can be installed on the crossroad ground to measure the traffic volume to make transport management such as a signal system change data, modifying data, and it can be installed on the ground or to a part of the sensor (10) should be stood out on the parking area to lead cars parked on the right way, and it can be used for the parking control system.

Also, it can be installed at the driving test place to see if the test car is outside or inside of course.

This invention, the shape of displacement response sensor by push down contact (10) can be made as circular cylinder on FIG. 5, and it can be installed to be covered around gas pipe to make the sensor pressed and sensed to ring the bell to protect the invader when a thief like unlawful invader go up by gas pipe of the building.

This invention, displacement response sensor can be installed as FIG. 6 on the flow or the automatic sliding door (D), and as FIG. 7 on the flow of automatic revolving door (D) as a stepping-stone.

Thus, if a person steps on the sensor (10) on the stepping-stone of the automatic sliding door or revolving door, the sensor (10) will be pressed and sensed, and the automatic sliding door will be open, and the automatic revolving door will be revolved.

As it is explained above, it can be installed in front of the elevator door, so when there is someone in front of the elevator door, the door will be open, and after the passenger enter the door, the door is closed.

FIG. 8 is a brief squint Figure showing different example of displacement response sensor by push down contact, and in the upper part of the Semi Conductive Metrix (34) a horizontal line has equal spacing, and in the bottom of Semi Conductive Metrix (34), a horizontal Figure (32) that is crossed has equal spacing, and the sensor will be possessed.

It connects the horizontal Figure (R) Rm to the connection L₁n that is connected to the electric circuit, and connects the vertical Figure (C) Cn to the connection L₂n that is connected to the electric circuit, and acknowledge one push down contact, and as the point of contact by compounding of resistance and Current is marked on the Figure, 3 Resistances and 4 Currents makes 12 point of contact (3×4=12), and one of the 12 points are pressed, the point is acknowledged.

Thus, the sensor (30) as mentioned above is installed to monitor to be used as touch screen, or keyboard.

FIG. 9 is a brief squint Figure showing different example of displacement response sensor by push down contact, the dielectric layer (41) is made in the middle, and in the upper part of dielectric layer, a horizontal Figure (R) is made, and in the bottom part of dielectric layer, the vertical Figure (C) is made.

And in the upper part of the horizontal Figure (R), the first Semi Conductive Metrix (44) is made, and in the upper part of the 1^(st) Semi Conductive Metrix (44) the 1^(st) conduction (42) is made. In the bottom part of the vertical Figure (C), the 2^(nd) Semi Conductive Metrix (44), and in the bottom of the 2^(nd) Semi Conductive Metrix (44), the 2nd conduction (42) is made, and in the 1^(st) conduction (42), the horizontal Figure (R), the 2^(nd) conduction (42), a perpendicular electric conductor (C), there are connection lines that are connected to the electric circuit.

It means that the 1^(st) conduction (42) is connected to L₁ one of the m of the horizontal Figure is connected to L₂, and acknowledge he push down contact in the horizontal Figure (R).

In other ways, one of the 2^(nd) conduction (42) is connected to the connection line L₁, and connects one of n perpendicular electric conductor to the connection L₂, and acknowledge the push down contact of the perpendicular electric conductor (C).

Thus, we can notice the position of push down contact by the combination of push down contact (m, n); m push down contact of the horizontal Figure (R) and n push down contact position.

FIG. 10 is a brief circuit Figure showing different example of displacement response sensor by push down contact, and it is a brief circuit Figure that the disconnection between the end part and comparison electric circuit part is noticed, and the disconnection check resistance (70) that is connected to Al, the terminal (−) of the 1^(st) comparison machine of voltage (56) and Bh, the terminal (+) of the 2^(nd) comparison machine of voltage (57) is installed.

It means that when we install to make the Rch, disconnection check resistance (70), be larger than Rx, the resistance of the Semi Conductive Metrix (54), because in the normal tithe, the input of Ah of the 1^(st) comparison machine of voltage (56) is smaller than the input of Al, the 1^(st) comparison machine of voltage (56) is low, and because the input of Bh is smaller than the input of Bl, the 2^(nd) comparison machine of voltage (57) is low, the output of OR gate (58) becomes low, in other word 0 the displacement response sensor is in normal condition.

In this kind of condition, when the L₁ is disconnected, the inputs of Al of the 1st comparison machine of voltage (56) and of Bh of the 2^(nd) comparison machine of voltage (57) are almost in the same level, the input of Ah of the 1^(st) comparison machine of voltage le (56) becomes to have larger value than the input of Al, the output of the 1^(st) comparison machine of voltage (56) becomes high, and thus, the output of OR gate (58) becomes high, and we can notice the disconnection.

When the L₂ is disconnected, the inputs of Bh of the 2^(nd) comparison machine of voltage (57) and Al of the 1st comparison machine of voltage almost becomes same level, the input of Bh of the 2^(nd) comparison machine of voltage becomes to have larger value than the input of Bl, the output of the 2^(nd) comparison machine of voltage (57) becomes high, and thus, the output of OR gate (58) becomes high and we can sense the disconnection.

And, if both L₁ and L₂ are disconnected, the inputs of Al of the 1^(st) comparison machine of voltage (56) and of Bh of the 2^(nd) comparison machine of voltage (57) becomes to be close to ½ Vcc by the internal resistance of the 1^(st) comparison machine of voltage (56) and the 2^(nd) comparison machine of voltage (57).

Thus, the input of Ah of the 1^(st) comparison machine of voltage (56) becomes larger than the input of Al, and the input of Bh of the 2^(nd) comparison machine of voltage (57) becomes larger than the input of Bl, both the outputs of the 1^(st) comparison machine of voltage (56) and the 2^(nd) comparison machine of voltage (57) becomes high, and thus, the output of OR gate (58) becomes high and we can notice the disconnection.

Thus, because the disconnection check resistance (70) that is connected to Al of the 1^(st) comparison machine of voltage (56) and Bhh of the 2^(nd) comparison machine of voltage (57) is connected more, one of the L₁ or L₂, which connect the 1^(st) conductor (52) and the 2^(nd) conductor (53) of the touch part (51) and the 1^(st) conductor (56) and the 1^(st) conductor (57) is disconnected or both are disconnected, we can sense the disconnection.

FIG. 11 is a brief circuit Figure showing different example of displacement response sensor by push down contact, and it is a brief circuit Figure that the disconnection between the end part and comparison electric circuit part is noticed, and the 3^(rd) comparison machine of voltage (96) is installed to connect OP1 h, terminal (+), to the 1^(st) resistance (89) of the sensor (80), and the 4^(th) comparison machine of voltage (97) is installed to connect Op₂l terminal (−) to the 2^(nd) resistance (91). And the resistance 6 (100) a part is connected to electric circuit, and the other part is connected to OP₁l, terminal (−) of the 3^(rd) comparison machine of voltage (96), and the resistance 7 (101) that a part is connected to the terminal (−) of the above the 3^(rd) comparison machine of voltage (96), and the other part is connected to OP2 h, terminal (+) of the 4^(th) comparison machine of voltage (97) is installed, and the resistance 8 (102) that a part is connected to ground and the other part is connected to OP₂h, terminal (+) of the 4^(th) comparison machine of voltage (97).

The 2nd OR gate (98) is installed at a part of the 3rd comparison machine of voltage(96) and the 4th comparison machine of voltage (97).

It means that the input of OP₁h of the 3^(rd) comparison machine of voltage (96) is ¾ Vcc, which is same as the input of Al of the 1^(st) comparison machine of voltage (86), and the input of OP₂l of the 4^(th) comparison machine of voltage is ¼ Vcc, which is same with Bh of the 2^(nd) comparison machine of voltage (87).

And the resistance value of R₆, the resistance 6 (100), R₇, the resistance 7 (101), and R₈, the resistance 8 can be installed differently. For example, if we install the ratio of the resistance value as R₆:R₇:R₈=1:3:1, the input of OP₁l of the 3^(rd) comparison machine of voltage (96) will be ⅘ Vcc, and the input of OP₂h of the 4^(th) comparison machine of voltage (97) becomes ⅕ Vcc.

Thus, because in the normal tithe, the input of OP₁h of the 3^(rd) comparison machine of voltage (96), the output of the 3^(rd) comparison machine of voltage (96) becomes low, and because the input of OP₂h of the 4^(th) comparison machine of voltage (97) is smaller than the input of OP₁l, the output of the 4^(th) comparison machine of voltage (97) becomes low.

With this kind of condition, when L₁ is disconnected, the OP₁h of the 3^(rd) comparison of machine of voltage (96) is connected with the 1^(st) resistance (89) and delivered, the input value of the OP₁h becomes 1 Vcc, and it has the price where the input price of the OP₁h is bigger input price of the OP₁ than the input of the 3^(rd) comparison of machine of voltage (96), the output of the 3^(rd) comparison of machine of voltage (96) becomes high (High).

When L₂ is disconnected, the OP₂l of the 4^(th) comparison of machine of voltage (97) is connected with the 2^(nd) resistance (91) and price of the OP₁l become 0 advance guards and input of the OP₂h is bigger than the input of OP₂l the output of the 4^(th) comparison of machine of voltage (97) becomes high (High).

It follows hereupon, both L₁ and L₂ are disconnected, the outputs of the 3^(rd) comparison with machine of voltage (96) and the 4^(th) comparison machine of voltage (97) becomes all high, and by the 3^(rd) comparison machine of voltage (96) and the 4^(th) comparison machine of voltage (97) the 2^(nd) OR gates (98) senses the disconnection of L₁ and L₂.

Consequently, by installing the 3^(rd) comparison machine of voltage (96), the 4^(th) comparison machine of voltage (97), 6^(th) resistance (100), 7^(th) resistance (101) and the 8^(th) resistance (102) to the sensor (80), the disconnection of the connection line is immediately identified, and it follows hereupon and immediately the connection line of the sensor (80) is disconnected the sensor (80) can be repaired or shifted.

FIG. 12 is a circuit block diagram showing the example of the displacement response sensor, and it is a brief circuit diagram that helps to get analog result.

As you can see from the FIG. 12, the 1st voltage flow that the non-reversal input department (+) is connected to the 1st conductor (111) is possessed, and the 2^(nd) voltage flow (114) that the non-reversal input department (+) is connected to the 2^(nd) conductor (112) is possessed.

And the 1st phase turner (115) that the 1st voltage flow is connected to the reversal input department (−), and the 2^(nd) phase turner (116) that the 2^(nd) voltage flow is connected to the reversal input department is possessed.

In a part of the 1^(st) phase turner (115) and 2^(nd) phase turners (116) the differential amplifier (117) which is connected with these is possessed, and to the other side of the differential amplifiers (117), the load system that is connected to the differential amplifier (117) and that shows the quantity of the electric power and pressure visually is possessed. We can use load system (118) motor, and the luminous lamp.

The displacement response sensor by push down contact (110), when the sensor (11) is pressed by the outside power, the output is made as the 1^(st) voltage flow (113) and the 2nd voltage flow (114) makes the electric power large to make the impedance low to fit into the next input impedance.

And it inputs two signals through the 1^(st) voltage flow (113) and the 2^(nd) voltage flow (114) to the 1st phase turner (115) and the 2nd phase turner (116) when the sensor (110) works, and phase shift and makes the difference between two signals that leads to a neutral point larger. The two signals that phase shifted is input to the differential amplifier (117), and the differential amplifier (117) amplifies to the signals that are matched with the voltage level of load system (118) and impedance.

When the signals amplified through the differential amplifier (117) is delivered to the load system (118), the operational degree of load system (118) is changed according to the delivered signals, and we can discern with eyes the level of pressure of sensor (110) through the load system (118).

Thus, the 1^(st) voltage flow, the 2^(nd) voltage flow (114), the 1^(st) phase turner (115) and the 2^(nd) phase turner (116), differential amplifier (117), and the load system (118) are connected and possessed, the sensor (110) can be installed to the analogue type of machine such as pressure gauge or weight gauge, or various gauge, and it can measure the level of the pressure or weight by looking at the level of the pressure of the sensor (110). Here, when the sensor is used for the weight gauge, not the softness but hardness materials can be used for the 1^(st) conductor (111) and the 2^(nd) conductor (112).

Also, it can be installed to the machines that use gas such as a dishwasher to measure of the pressure of the gas, and to the pipe to measure of the liquid pressure of the inside of pipe. The FIG. 13 is a brief circuit diagram showing the other examples of using this invention, displacement of response sensor by push down contact, and that helps to get the level of push down contact of the sensor as a digital result.

As you can see from the FIG. 13, the 1^(st) A/D converter (125) is connected to the 1^(st) voltage flow (123) that is connected to the 1^(st) conductor (121), and the 2^(nd) A/D converter (124) that is connected to the 2^(nd) conductor (122) is connected and possessed. And the subtractor (127) is connected the inverter (128) is connected and possessed to the subtractor, and the shift register (129) is connected and possessed to the inverter (128).

Even in the displacement response sensor by push down contact (120), the sensor (120) is pressed, the pressure level of the sensor (120) is digitalized, we can obtain same numbers as seen from the FIG. 14, if the sensor is pressed, it makes be the output impedance enough low as the 1^(st) voltage flow (123) and the second voltage flow (124), in other word, to make the electric quantity large, and transfers the output signals to digital numbers through the 1^(st) A/D converter (125) and the 2^(nd) A/D converter (126).

When the digital numbers by the two signals are reduced through the subtractor, the value when the pressure is made, becomes smaller than the values in the normal situation, and the reduced value becomes larger than the normal numbers when the reverser (128) goes through the reverser (128).

At that time, by moving the value that is always even number until the reverser it makes the gab of the minimum measured value as 1, and obtain the expected results, and the effectiveness of it is as same as above.

FIG. 15 is a brief circuit diagram showing the different examples of using this invention, displacement of response sensor by push down contact and it is a brief circuit diagram that distinguishes disconnection and push down contact by the electric power flowing on the Semi Conductive Metrix.

The electric current driver (134) is connected to the 1^(st) conductor (131). The switch is connected to the electric driver (134) to make the electric driver (134) work, and the terminal (−) is connected to the 2^(nd) conductor (132), and electric voltage-pressure converter that changes the electric voltage to the change of pressure is connected.

And the 1^(st) voltage comparison machine (137) that the terminal (−) is connected to the electric current-voltage converter is connected, and the voltage comparison machine that the terminal (+) is connected to electric current-voltage converter is connected and possessed.

This displacement response sensor by push down contact closes the switch (135) to make the electric current driver (134) ID, and makes Ix electric flow through the L₁ that connects the electric current driver, the resistance Rx of Semi Conductive Metrix (133) and L2 that connects the 2^(nd) conductor (132) and the electric current-voltage converter (136).

As an example, when the output of the electric current-voltage converter (136) is made as ½ Vcc, and Vcp, a point of contact that is connected to the terminal (+) of the 1^(st) comparison machine of voltage (137), if resistance Rx of Semi Conductive Metrix (133) is pressed and the resistance value of Rx becomes small, Irx, explained above, becomes larger, and through the electric current-voltage converter (136) Irx, electric current is changed to the voltage Viv, and the value becomes smaller than ¼ Vcc.

Therefore, the value that is smaller than ¼ Vcc is input to the terminal (−) in the low part of the 1^(st) comparison machine of voltage (137), and Vcp, the input value is ¼ Vcc has bigger value, the input of the 1^(st) comparison machine of voltage (137) becomes high, and we can sense that Semi Conductive Metrix (133) is pressed.

On the other side, when the value of Vop, a point of contact that is connected to the terminal (−) of the 2^(nd) comparison machine of voltage (138) is decided as ¾ Vcc, if L1 or L2 is disconnected, both L₁ and L₂ are disconnected, electric current Ir₂ reaches to 0, and electric current Ir₂ becomes voltage Viv through the electric current-voltage converter (136).

The changed voltage value becomes ¾ Vcc, and the value is input to the terminal (+) in the high part of the 2^(nd) comparison machine of voltage (138).

Thus, the value of the voltage of terminal (+) becomes larger than the voltage value of Vop of the 2^(nd) comparison machine of voltage (138) that has value of ¾ Vcc, the output of the 2^(nd) comparison machine of voltage (138) becomes high, and we can sense the disconnection of L₁ or L₂ or both L₁ and L₂.

It means that we can sense the disconnection of L₁ or L₂ or push down contact by the electric current amount that flows at the Semi Conductive Metrix (133), and the effectiveness of it is as same as mentioned above.

FIG. 16 is a brief circuit diagram showing the other example of the other example of using this invention, displacement response sensor by push down contact, and by removing a noise, we can eliminate the errors and distinguish the disconnection.

The 1st voltage flow (148) that the terminal (+) is connected to the resistance (145) is possessed, and the 2^(nd) voltage flow (149) that the terminal (+) is connected to the 2^(nd) resistance is possessed.

In the 1^(st) voltage flow (148) and the 2^(nd) voltage flow (149), the differential amplifier (150) that the output of the 1^(st) voltage flow (148) and the 2^(nd) voltage flow (149) is possessed.

And, the 1^(st) comparison machine of voltage (151) that the terminal (−) of the differential amplifier (150) that is connected to the 1^(st) comparison machine of voltage (151) is possessed, and the 2^(nd) comparison machine of voltage (152) that the terminal (+) is connected to the differential amplifier (150).

In the displacement response sensor by push down contact, a noise that is input to the electric circuit through the 1st resistance (145) R₁, L₁, Rx, L₂, and 2nd resistance (147) R₂ and a noise that is input to the electric circuit of the 1st voltage flow (148) and the 2^(nd) voltage flow (149) are removed through the differential amplifier (150), and when we assume the profits of the differential amplifier as n the output of the differential amplifier (150) becomes Vdfa=n(Vf₁−Vf₂), and we obtain the signal by the displacement of Rx.

As one example, when R₁:Rx:R₂=1:2:1 is decided and the value of Vcp, a point of contact that is connected to the terminal (+) of the 1st comparison machine of voltage (151) is decided, the value of the 1st voltage flow (148) of the normal condition, and the value of the 2nd voltage flow (149) is ¼ Vcc, and if the voltage profit is 1 the output value of the differential amplifier (150), Vdfa becomes ½ Vcc.

Thus, the output of the differential amplifier (150) has bigger than ⅓ Vcc, the value of Vcp, the output of the 1^(st) comparison machine of voltage (151) becomes low.

In this condition, if Rx by the pressure of Semi Conductive Metrix (144) that has anti-electric conduction is reduced, and becomes R₁:Rx:R₂=2:1:2, the value of the 1st voltage flow (140) is ⅗ Vcc, the value of the 2^(nd) voltage flow (149) is ⅖ Vcc, and the output of the differential amplifier (150) Vdfa becomes ⅕ Vcc.

Thus, because the value of the differential amplifier (15) Vdfa has smaller value than ⅓ Vcc, the output of the 1^(st) voltage flow (151) becomes high, and we can sense the pressure of the Semi Conductive Metrix (144).

In the value of Vop, a point of contact that is connected to the terminal (−) of the 2^(nd) voltage flow (152) is decided as ⅔ Vcc, when L₁ or L₂ is disconnected, or both L₁ and L₂ are disconnected, Vf1 i that is input to the 1^(st) comparison machine becomes Vcc, and Vf₂i that is input to the 2^(d) comparison machine of voltage (152) reaches at 0.

Thus, the output of the 1^(st) voltage flow (148) Vf₁ becomes Vcc, the output of the 2^(nd) voltage flow (149) Vf₂ becomes 0 and the output of Vdfa has larger value of Vop, the output of the 2^(nd) comparison machine of voltage (152) becomes high, and we can sense the disconnection of L₁ or L₂ or both L₁ and L₂.

FIG. 17 is a brief circuit diagram showing the other example of using displacement response sensor by push down contact, and the main circuit and sub-circuit are established, a noise is removed, and the characteristics of hysteresis is applied in the established condition of push down contact, the disconnection is distinguished.

The switch (165) is possessed, the electric current handler that a part is connected to the switch (165), and it is connected to the 1st conductor (161) of the sensor (160) by connection line L₁.

And by connection line L₂, the 1st electric current-voltage converter (166) is possessed, the 1^(st) phase turner (168) is connected to a part of the 1^(st) electric current-voltage converter (166), the 1^(st) phase turner (168) is connected to the differential amplifier (173), the push detector (174) is connected and possessed to a part of the differential amplifier (173), a part is connected to output part of the push detector (174) at the push detector (174), and resistance Rhis that is connected to the terminal (+) of the push detector (174).

And, by the connection line L₁, the 2^(nd) electric current-voltage converter (167) that is connected through the resistance Rx that is as same as the resistance Rx of normal condition is possessed, the 2^(nd) phase turner (169) is connected to a part of the 2^(nd) electric current-voltage converter (167), and the output part of the 2nd phase turner (169) is connected to the differential amplifier (173).

Between the 1^(st) phase turner (168) and the differential amplifier (173), the 1^(st) disconnection distinguisher (171) that is connected to the terminal (−), and between the 2^(nd) phase turner (169) and the amplifier (173), the 2^(nd) disconnection distinguisher (172) that the terminal (−) is connected.

In this connected electric circuit, the output voltage Vdfa of the differential amplifier (173) has 0 in normal time, and when the sensor (160) becomes push down contact, the value of Rx becomes smaller and when Ir₂ becomes increased, the gap of he output voltage Vmain and Vsub of the 1st phase turner (168) becomes larger, the output voltage Vdfa of the differential amplifier (173) is increased.

As an example, if the value of Vcp is set as ⅓ Vcc, the output voltage Vdfa of the differential amplifier (173) becomes increased and the value of Vdfa becomes bigger than ⅓ Vcc, the output of the push detector (174) becomes high and it senses push down contact.

After it becomes to have the characteristics of histerisis because it is around track to Vdfa by Rhis.

But, if the Irx by disconnection of L₂ becomes 0 the output voltage Vmain of the 1^(st) phase turner becomes minimum.

If Vop₁, the disconnection distinguish voltage of the 1^(st) disconnection distinguisher (171) is decided as smaller than the minimum of Vmain, the output of the 1^(st) disconnection distinguisher (171) becomes high and the disconnection of L₂ is sensed.

And if Ir₂ becomes 0 by disconnection of L₂, Vsub becomes minimum.

If Vop₂, the disconnection distinguish voltage of the 2^(nd) disconnection distinguisher (172) is decided as smaller than the minimum of Vsub, the output of the 2^(nd) disconnection distinguisher (172) becomes high and the disconnection of L₂ is sensed.

FIG. 18 or FIG. 22 is a squint showing the other example of using this invention, the displacement response sensor by push down contact, and it differentiates the shapes of sensor.

As you can see from the FIG. 18, the 1^(st) Semi Conductive Metrix (181) and the 2^(nd) Semi Conductive Metrix (182) are established, and between the 1^(st) Semi Conductive Metrix (181) and the 2^(nd) Semi Conductive Metrix (182), electric conduction layer is established, many horizontal Figures (R) are established in the upper part of the 1st Semi Conductive Metrix (181), in order to establish many vertical Figures (C), the shapes and structure of sensor (180) can be different, and it can be installed and used on the touch screen or keyboard.

As you can see from FIG. 19, the 1^(st) Semi Conductive Metrix (191) and the 2^(nd) Semi Conductive Metrix (192) are established, the 1^(st) conduction layer (193) is established in the bottom of the 1^(st) Semi Conductive Metrix (191), the 2^(nd) conduction (192) is established in the bottom part of the 2^(nd) Semi Conductive Metrix (192), many horizontal Figures (R) are established in the upper part of the 1^(st) Semi Conductive Metrix, many vertical Figures (C) are established in the upper part of the 2^(nd) Semi Conductive Metrix (192), and the shapes and structors of the sensor (190) can be different to establish the insulated layer (195) between the 1^(st) conduction (193) and the 2^(nd) Semi Conductive Metrix (194), and the effectiveness is as same as explained above.

As you can see from FIG. 20 (201, the whole shape of the sensor (200) is established, the 1^(st) Semi Conductive Metrix (201) and the 2^(nd) Semi Conductive Metrix (202) are established, the 1^(st) conduction whose shape looks like a disc is established in the upper part of the 1^(st) Semi Conductive Metrix (201), the 2^(nd) conduction (204) whose shape looks like a taret in the bottom part of the 1^(st) Semi Conductive Metrix (201), the 3^(rd) conduction (205) whose shape looks like a target in the upper part of the 2^(nd) Semi Conductive Metrix (202), the 4^(th) conduction (206) whose shape looks like a disc in the bottom part of the 2^(nd) Semi Conductive Metrix (202), and in order to make insulation layer (207) between the 2^(nd) conduction (204) and the 3^(rd) conduction (205) the shape and structure of the sensor (200) can be different, and it can be used as a target board at the gun field or archery field.

As you can see from FIG. 21, the whole shape of the sensor (210) is established as a pillar shape, the 1^(st) conduction (211) and the 2^(nd) conduction (212) whose shape looks like a target board, the shape and structure of the sensor (210) can be different in order to make Semi Conductive Metrix (213) between the 1^(st) conduction (211) and the 2^(nd) conduction (212), and the effectiveness is as same as explained above.

As you can see from FIG. 22, the whole shape of the sensor (220) is established as a pillar shape, the 1st Semi Conductive Metrix (221) and the 2^(nd) Semi Conductive Metrix (222) are established, the 1^(st) conduction (223) whose shape looks like a target board in the upper part of the 1^(st) Semi Conductive Metrix (221), the 2^(nd) conduction (224) whose shape looks like a target board in the bottom part of the 2^(nd) Semi Conductive Metrix (222), and the shape and structure of the sensor (220) can be different in order to make the 3^(rd) conduction (225) between the 1^(st) Semi Conductive Metrix (221) and the 2^(nd) Semi Conductive Metrix (222).

FIG. 23 is a brief circuit diagram showing the other example of using this invention, and it is a way of searching the level of push down contact, and establish main circuit and sub-circuit by removing noise that is input from outside and it is designed to extract the level of change of the conduction rate by pure push down contact. 

1. In the displacement response sensor by push down contact, the Semi Conductive Metrix (14) that has electric conduction (15) and has elasticity that forms resistance Rx is established; the 1st conductor (12) (111) (131) that has electric conduction (15) in the upper part of the above Semi Conductive Metrix (14) is established; the contact part where 2^(nd) conductor (13) (112) (132) that includes the electric conduction (15) is formed in the bottom part of the above Semi Conductive Metrix (14); the 1^(st) resistance (19) (89) that is connected to the 1^(st) conductor above and to the electric part; the 2^(nd) resistance (21) (91) that is connected to the 2^(nd) conductor (13) above and a part is connected to ground; the 1^(st) comparison machine of voltage (16) (56) that is connected to the terminal (−) in the low part of the 1^(st) conductor (12) above; the 2^(nd) comparison machine of voltage (17) (57) that is connected to the 2^(nd) conductor (13) above in the terminal (+) in the high part; the 3^(rd) resistance (22) whose part is connected to the electric power, and the other part is connected to the terminal (+) in the high part of the 1st comparison machine of voltage (16) above; the 4^(th) resistance (23) that a part is connected to the terminal (+) of the 1^(st) comparison machine of voltage (16) above, and the other part is connected to the terminal (−) of the 2^(nd) comparison machine of voltage (17); The 5^(th) resistance (24) that a part is connected to the ground, and the other part is connected to the terminal (−) of the 2^(nd) comparison machine of voltage (17) above; and OR gate (18) (88) that is connected to the 1^(st) comparison machine of voltage (16) and the 2^(nd) comparison machine of voltage (17) above and that makes signals according to the output. The displacement response sensor by push down contact has the above constitution.
 2. Displacement response sensor by push down contact that has special characteristics that the disconnection check resistance (70) whose part is connected to the terminal (−) of the 1^(st) comparison machine of voltage (56) and whose the other part is connected to the terminal (+) of the 2^(nd) comparison machine of voltage (57) above.
 3. In the 1^(st) claim, the 3^(rd) comparison machine of voltage (96) that is installed to connect the terminal (+) to the 1^(st) resistance (89); the 4^(th) comparison machine of voltage (97) that is installed to connect the terminal (−) to the 2^(nd) resistance (91); the 6^(th) resistance (100) whose part is connected to electric power and the other part is connected to the terminal (−) of the 3^(rd) comparison machine of voltage (96); the 7^(th) resistance (101) that a part is connected to the terminal (−) of the 3^(rd) comparison machine of voltage (96) and the other part is connected to the terminal (+) of the 4^(th) comparison machine of voltage (97); the 8^(th) resistance (102) that a part is connected to the ground and the other part is connected to the terminal (+) of the 4^(th) comparison machine of voltage (97); and the 2^(nd) OR gate (98) that is connected to the 3^(rd) comparison machine of voltage (96) and the 4^(th) comparison machine of voltage (97). This invention, displacement response sensor by push down contact has special characteristics above.
 4. In the 1^(st) claim, the 1^(st) voltage flow (113) that the non-reversal input department (+) is connected to the 1^(st) conductor (111); the 2^(nd) voltage flow (114) that the non-reversal input department (+) is connected to the 2^(nd) conductor (112); the 1^(st) phase turner (115) that the 1^(st) voltage flow (113) is connected to the reversal input department (−); and the 2^(nd) phase turner (116) that the 2^(nd) voltage flow (114) is connected to the reversal input department (−); the differential amplifier (117) that is connected to the 1^(st) phase turner and the 2^(nd) phase turner (116); load equipment that is connected to the differential amplifier (117) and that shows the quantity of the electric current and voltage visually from the differential amplifier (117). This invention, the displacement response sensor by push down contact has special characteristics above.
 5. In the claim 4, the 1^(st) A/D converter (125) is connected to the 1^(st) voltage flow (123); the 2^(nd) A/D converter (126) is connected to the 2^(nd) voltage; the subcontractor (127) is connected to the 1^(st) A/D converter (125) and the 2^(nd) A/D converter (126); the inverter (128) is connected to the subcontractor (127); and the shift register (129) is connected to the inverter (128). This invention, the displacement response sensor by push down contact has the special characteristics above.
 6. In the claim 1, the electric current driver (134) is connected to the 1^(st) conductor; the switch (135) that makes electric current driver (134) work is connected to the electric current driver (134); the electric current-voltage converter (136) that the terminal (−) is connected to the 2^(nd) conductor (132) and that converts the electric current to voltage is connected; the 1^(st) voltage comparison distinguish machine (137) that the terminal (−) is connected to the electric current-voltage converter (136) is connected; and the 2^(nd) voltage comparison distinguish machine that the terminal (+) is connected to the electric current-voltage converter (136). This invention, the displacement response sensor by push down contact has the special characteristics above.
 7. In the 1^(st) claim, the 1^(st) voltage flow that the terminal (+) is connected to the resistance 1 (145) is possessed; the 2^(nd) voltage flow (149) that the terminal (+) is connected to the 2^(nd) resistance (147); the differential amplifier (15) that the outputs of the 1^(st) voltage flow (148) and the 2^(nd) voltage flow (149) are input is possessed; the 1^(st) comparison machine of voltage (151) that the terminal (−) is connected to the differential amplifier (150) is possessed; and the 2^(nd) comparison machine of voltage (152) that the terminal (+) is connected to the differential amplifier (150) is possessed. This invention, displacement response sensor by push down contact has special characteristics above. 